"Today's commercial and military radar systems designers are facingconstant pressure to build higher performance solutions in smaller, lighterand more highly ruggedized configurations, particularly in airborneapplications," said Wil Salhuana, HVVi President. "Using the industry'sfirst high frequency, high voltage vertical field effect transistor(HVVFET) architecture, our new RF power transistors allow designers ofairborne DME systems to improve performance, reduce product footprint andweight, and maximize system reliability at the same time."

Eliminating Amplification Stages

The three new power transistors allow designers to build high density, highimpedance systems in easy-to-match 48V components. Designed for L-bandavionics applications operating between 1025 MHz to 1150 MHz, theHVV1012-060 RF transistor is designed for 48V operation and delivers over60W of pulsed output power. The new device delivers 23 dB of gain whenpulse width = 10 µsec and pulse duty cycle = 1% at VDD = 48V and IDQ = 25mA. To help boost system reliability, the HVV1012-060 is specified towithstand a 20:1 VSWR over all phase angles at the rated output power andoperating voltage across the entire frequency band.

The HVV1012-100 RF transistor is also designed for L-band applications inthe 1025 to 1150 MHz frequency band. It also operates off a 48V supplyvoltage and delivers over 100W of pulsed output power. The new transistoroffers a power gain of 20.5 dB under a pulse width of 10 µsec and a pulseduty cycle of 1% at VDD = 48V and IDQ = 50 mA. Like the HVV1012-060, thenew device is specified to withstand a 20:1 VSWR.

The third product in the family, the HVV1012-250 RF transistor, deliversover 250W of pulsed output power. Operating off a 48V supply, thetransistor offers a gain of 20 dB with a pulse width = 10 µsec and pulseduty cycle = 1% at VDD = 48V and IDQ = 100 mA. Like the other products inthe family, this device is specified to withstand a 20:1 VSWR over allphase angles at the rated output power and operating voltage across theentire frequency band.

From a system's perspective, the HVVFET architecture's unique performanceadvantages in terms of gain, efficiency and impedance allow designers toeliminate amplification stages in Power Amplifiers (PAs), reduce partscount, and shrink PCB space requirements. For example, designers buildinga 1 kW PA can use the HVV1012-060 to drive multiple HVV1012-250 devices andreplace three-stage amplifiers using comparable LDMOS or bipolarcomponents. A complete 48V-compatible product line simplifies power supplydesign and minimizes power supply circuitry. At the same time, thetechnology's higher rated ruggedness allows system designers to eliminatebulky and costly isolators and, in the process, significantly reduce systemweight and size, a key consideration inweight- and space-constrained avionics environments.

Price and Availability

All three devices are sampling immediately and come in a compactHV400-style, two-lead metal flanged package with liquid crystal polymerlid. The package is MIL-STD-883 qualified. The HVV1012-060 sells for$199.01 in 1-24 unit quantities, the HVV1012-100 costs $226.15 in 1-24quantities and the HVV1012-250 is available for $398.31 in 1-24 quantities.Orders may be placed with Richardson Electronics www.rfwireless.rell.com ,1-800-RF POWER or (1-800-737-6937), in France +33.1.55.66.00.30, or contactHVVi at sales@hvvi.com.

About HVVi Semiconductors

HVVi Semiconductors, Inc. is a developer and supplier of silicon powertransistors for radar and avionics applications. The company develops newpower solutions based on its innovative new High Voltage Vertical FieldEffect Transistor (HVVFET) architecture. Using this proprietary,silicon-based device architecture, HVVi Semiconductors, Inc. is developinga new generation of power transistors that offer dramatic improvements inpower output, frequency performance, and power efficiency. This newtechnology will allow OEMs in the radar and avionics markets to improvesystem performance and reliability while reducing system and operatingcosts. HVVi Semiconductors, Inc. is headquartered in Phoenix, Arizona. Thecompany's investors include Mobius, Advanced Technology Ventures, HorizonVentures and ON Semiconductor. For more information, please visit thecompany website: www.hvvi.com.

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