On Monday, Toshiba Corp. said that it will start shipping NAND flash memory with 32nm process technology ahead of its original schedule.
Originally planned for the fall, samples of the higher-density storage is already being ship to its partners with volume production this July, two months ahead of its original plan.
NAND flash memory chips to a (32nm process technology) that combines X3 and 32 nanometer manufacturing processes is designed to offer 32 GB capacity with three bits of memory per cell, all in a package small enough to fit the microSD memory card format. Its process allows a single, thin 32-gigabit (4GB) chip and, with eight stacked chips producing 32GB of memory in a single package.
Last February, Toshiba and SanDisk team up to make a breakthrough in NAND flash memory at International Solid-State Circuits Conference (ISSCC). In which SanDisk's executive vice president for OEM business unit and corporate engineering Yoram Cedar said in a statement that the The 32nm X3 die's small footprint and incredible density will allow for the production of higher capacities of microSD cards than could be manufactured without this technology.
Toshiba reveals that detachable cards and USB storage will get the memory first, but that embedded uses like in mobile phones will come soon afterwards. The company also expects increase in capacity of 32nm memory in the future and reveals that it will ship half-density, 16-gigabit (2GB) chips on the same process this coming fall.