Qualcomm’s upcoming Snapdragon 820 SoC has been touted as one of the powerful chipsets waiting to be released. The chipmaker is apparently leaving no stone unturned to get it right this time, as the predecessor Snapdragon 810 was mired with unprecedented overheating problems.
According to a credible Chinese analyst Pan Jiutang, Qualcomm’s Snapdragon 820 packs “considerable upgrade” over the Snapdragon 810. To top it off, the S820 is reportedly 50 percent more powerful than Samsung’s current-generation Exynos 7420 chip, which was last seen in the flagship Samsung Galaxy S6.
Meanwhile, G For Games reminds us that, even though, the Qualcomm Snapdragon 820 sounds very powerful, by the time the chipmaker releases the silicon, Samsung would have readied the successor of Exynos 7420. To be specific, the Exynos M1 is believed to replace the chip powering the Galaxy S6. Plus, the upcoming Galaxy S7 is expected to come housed with the new Exynos M1 SoC. The release date of the Samsung flagship is rumored to be some time in the first quarter of 2016.
A new report also suggested that the Samsung Galaxy S7 will make use of both Exynos and Qualcomm chipsets, based on the region of release. A total of three chipsets have been tipped thus far and they are Exynos M1, Snapdragon 820 and Exynos 7422.
Phone Arena, meanwhile, says the Exynos-based chipset powered S7 will be sold in Asian markets, while the international variants will be powered by the Qualcomm silicon. Qualcomm is believed to have used 14nm FinFET process to manufacture the Snapdragon 820 chip. This chipset will reportedly come equipped with Cat 10 LTE support with data speeds up to 450 Mbps downlink and 4K video playback support.
The S820 chipset is believed to be powering at least 30 high-end smartphones earmarked for release in 2016, G For Games noted. The Xiaomi Mi 5 is one of the rumored flagships to house this chipset. In any case, readers should note that Qualcomm and Samsung have not confirmed the details related to the upcoming chipsets.