Today, Samsung Electronics Co. announced its development of the first 4Gbit DDR3 DRAM chip using a 50-nanometer (nm) lithography process.

The chip is targeted to work in conjunction with the new generation of green PC's to create a much more efficient system; however the technology will also find its way into dual in-line memory modules, servers and laptops.

In a statement released, VP for technical marketing at Samsung Semiconductor Kevin Lee explain We have leveraged our strength in innovation to develop the first 4-Gb DDR3, in leading the industry to higher DRAM (Dynamic Random Access Memory) densities.

The new chip doubles the density of earlier DRAM chips, yielding modules with up to 32GB capacity.

The chips are a high-end technology that will be used in data centers that need densely packed electronics that don't throw off as much heat.

It's an achievement to create faster chips that use less power. It translates into lower power costs, smaller power supplies, lower maintenance and repair fees. Samsung can thus claim that these new chips can be used in green servers.