Samsung’s upcoming Galaxy S7 powered by Snapdragon 820 SoC tops the Geekbench benchmark test.
According to reports, Qualcomm’s powerful Snapdragon 820 chipset will be part of the Samsung Galaxy S7 earmarked for the U.S. and China. Meanwhile, the upcoming Exynos 8890 chipset will be powering the S7 headed to the rest of the world. We recently learned that the Exynos 8890 made history by securing 100K+ points in the AnTuTu benchmark test.
Following the Exynos 8890 SoC, the Snapdragon 820 has topped the charts with a phenomenal 2456 points in the Geekbench single-core test. The Galaxy S7 also scored an impressive 5423 on the multi-core test, according to a Weibo update picked up by Tech Grapple.
It is worth noting that Samsung settled for the Exynos 7420 SoC for its Galaxy S6 lineup of devices because of the overheating issues seen in the infamous Snapdragon 810 chipset, Phone Arena reported. However, this time around, the enhanced S820, with no known overheating issues so far, will be part of the Galaxy S7.
Qualcomm will reportedly supply the new Snapdragon 820 chipsets in January 2016 to OEMs. Following this, the Galaxy S7 release date is believed to be set for Feb. 21, 2016, a day prior to the MWC 2016 conference scheduled in Barcelona.
Technically, the Snapdragon 820 chip can be clocked at up to 2.2 GHz. However, Xiaomi Mi 5 with S820 on board was apparently spotted running with a reduced frequency of 1.59 GHz in Geekbench site. This chipset bundle reportedly scored a relatively lesser 2162 in single-core test. This also means that in case the Snapdragon 820 runs at 2.2 GHz, it has the capability to top the charts with 2456 or more.
Meanwhile, Phone Arena said the S820 version specific to the Galaxy S7 has been optimized with “better thermal management and lower power consumption.” This is apparently done by running at a higher frequency than the regular chipset. To top it off, a “heat pipe” has also been added to manage the produced heat in a better way.