Samsung Electronics Co., Ltd. announced that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module.

The company says that the 1-Gigabit DDR2 component (x8) and a 1- Gigabyte 800Mbps have been certified at Intel Platform Validation program to be processed at 40-nm for used with Intel® GM45 series Express mobile chipsets.

Samsung claims that a one year migration to 40-nm class process technology is expected to accelerate the time-to-market cycle by 50 percent. DRAM technology node also boost up to 60% increase in productivity than its predecessor 50-nm when the new technology is use to DDR. It is also said that it has a capability to ease the use power consumption up to 30 percent.

Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace, said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.

Samsung plans to apply its 40-nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009 that will mark to the development of ultra-high performance DRAM technologies such as DDR4.