SANDISK has announced some serious breakthroughs in NAND flash memory in collaboration with its long-standing co-development partner Toshiba at International Solid-State Circuits Conference (ISSCC).

NAND flash memory chips to a (32nm process technology) that combines X3 and 32 nanometer manufacturing processes is designed to offer 32Gb capacity with three bits of memory per cell, all in a package small enough to fit the microSD memory card format.

SanDisk's executive vice president for OEM business unit and corporate engineering Yoram Cedar said in a statement that the The 32nm X3 die's small footprint and incredible density will allow for the production of higher capacities of microSD cards than could be manufactured without this technology.

In San Francisco, the two companies also announced that they will start manufacturing the world's highest-capacity 64Gbit die using 4-bits-per-cell (X4) multi-level cell (MLC) technology.